6 research outputs found
±0.3V Bulk-Driven Fully Differential Buffer with High Figures of Merit
A high performance bulk-driven rail-to-rail fully differential buffer operating from ±0.3V supplies in 180 nm CMOS technology is reported. It has a differentialâdifference input stage and common mode feedback circuits implemented with no-tail, high CMRR bulk-driven pseudo-differential cells. It operates in subthreshold, has infinite input impedance, low output impedance (1.4 kâŠ), 86.77 dB DC open-loop gain, 172.91 kHz bandwidth and 0.684 ÎŒW static power dissipation with a 50-pF load capacitance. The buffer has power efficient class AB operation, a small signal figure of merit FOMSS = 12.69 MHzpFÎŒWâ1, a large signal figure of merit FOMLS = 34.89 (V/ÎŒs) pFÎŒWâ1, CMRR = 102 dB, PSRR+ = 109 dB, PSRRâ = 100 dB, 1.1 ÎŒV/âHz input noise spectral density, 0.3 mVrms input noise and 3.5 mV input DC offset voltage.Junta de AndalucĂa - ConsejerĂa de EconomĂa, Conocimiento, Empresas y Universidades P18-FR-4317Agencia Estatal de InvestigaciĂłn - FEDER PID2019-107258RB-C3
Class AB Voltage Follower and Low-Voltage Current Mirror with Very High Figures of Merit Based on the Flipped Voltage Follower
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4.0/).The application of the flipped voltage follower to implement two high-performance circuits
is presented: (1) The first is a class AB cascode flipped voltage follower that shows an improved slew
rate and an improved bandwidth by very large factors and that has a higher output range than the
conventional flipped voltage follower. It has a small signal figure of merit FOMSS = 46 MHz pF/ÎŒW
and a current efficiency figure of merit FOMCE = 118. This is achieved by just introducing an addi-
tional output current sourcing PMOS transistor (P-channel Metal Oxide Semiconductor Field Effect
Transistor) that provides dynamic output current enhancement and increases the quiescent power
dissipation by less than 10%. (2) The other is a high-performance low-voltage current mirror with
a nominal gain accuracy better than 0.01%, 0.212 Ω input resistance, 112 GΩ output resistance,
1 V supply voltage requirements, 0.15 V input, and 0.2 V output compliance voltages. These char-
acteristics are achieved by utilizing two auxiliary amplifiers and a level shifter that increase the
power dissipation just moderately. Post-layout simulations verify the performance of the circuits in a
commercial 180 nm CMOS (Complementary Metal Oxide Semiconductor) technology
Class AB Voltage Follower and Low-Voltage Current Mirror with Very High Figures of Merit Based on the Flipped Voltage Follower
The application of the flipped voltage follower to implement two high-performance circuits is presented: (1) The first is a class AB cascode flipped voltage follower that shows an improved slew rate and an improved bandwidth by very large factors and that has a higher output range than the conventional flipped voltage follower. It has a small signal figure of merit FOMSS = 46 MHz pF/”W and a current efficiency figure of merit FOMCE = 118. This is achieved by just introducing an additional output current sourcing PMOS transistor (P-channel Metal Oxide Semiconductor Field Effect Transistor) that provides dynamic output current enhancement and increases the quiescent power dissipation by less than 10%. (2) The other is a high-performance low-voltage current mirror with a nominal gain accuracy better than 0.01%, 0.212 ⊠input resistance, 112 G⊠output resistance, 1 V supply voltage requirements, 0.15 V input, and 0.2 V output compliance voltages. These characteristics are achieved by utilizing two auxiliary amplifiers and a level shifter that increase the power dissipation just moderately. Post-layout simulations verify the performance of the circuits in a commercial 180 nm CMOS (Complementary Metal Oxide Semiconductor) technology
±0.3V Bulk-Driven Fully Differential Buffer with High Figures of Merit
A high performance bulk-driven rail-to-rail fully differential buffer operating from ±0.3V supplies in 180 nm CMOS technology is reported. It has a differential–difference input stage and common mode feedback circuits implemented with no-tail, high CMRR bulk-driven pseudo-differential cells. It operates in subthreshold, has infinite input impedance, low output impedance (1.4 kΩ), 86.77 dB DC open-loop gain, 172.91 kHz bandwidth and 0.684 μW static power dissipation with a 50-pF load capacitance. The buffer has power efficient class AB operation, a small signal figure of merit FOMSS = 12.69 MHzpFμW−1, a large signal figure of merit FOMLS = 34.89 (V/μs) pFμW−1, CMRR = 102 dB, PSRR+ = 109 dB, PSRR− = 100 dB, 1.1 μV/√Hz input noise spectral density, 0.3 mVrms input noise and 3.5 mV input DC offset voltage
±0.15 V threeâstage bulkâdriven AB OTA with 36 MHzpF/”W and 55(V/”s)pF/”W small and largeâsignal figures of merit
Abstract A threeâstage railâtoârail bulkâdriven class AB OTA that operates with ±0.15 V supplies and a power dissipation of 90 nW is introduced. The first two stages use resistive local common mode feedback. The OTA uses simple phase lead compensation. It has a 36 MHz.pF/ÎŒW small signal figure of merit and a 55(V/ÎŒs) pF/ÎŒW large signal figure of merit